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Power Electronics Lab Experiments

Study the Characteristics of MOSFET

Nov 27 2023


Aim

To Study the Characteristics of MOSFET

Apparatus Required:

  1. Power Electronics Board
  2. DC power supplies + 15 V and + 35 V.
  3. Digital multi-meter.
  4. 2mm patch cords.

Circuit Diagram

Circuit used to plot different characteristics of MOSFET is shown in figure

circuit-diagram

Procedure:

  1. Connect +35 Y and +15 Y DC power supplies at their indicated position from external source.
  2. To plot drain characteristics proceed as follows:
  3. Rotate both the potentiometer P1 and P2 fully in counter clockwise direction.
  4. Connect Ammeter between test point '2' and '3' to measure gate current IG (mA) between test point '4' and '5' to measure drain current ID(mA).
  5. Short or connect a 2mm patch cord between test point '4' and '5'.
  6. Connect one voltmeter between test point '6' and ground to measure drain voltage VDS other voltmeter between test point '1' and ground to measure gate voltage VGS.
  7. Switch 'On' the power supply.
  8. Vary potentiometer P2 and set a value of gate voltage VGS at some constant value (3 V, 3.1 V, 3.2 V)
  9. Vary the potentiometer P1 so as to increase the value of drain voltage VDS from zero to 35 V in step and measure the corresponding values of drain current IE for different constant value gate voltage VGS in an observation table.
  10. Rotate potentiometer P1 fully in counter clockwise direction.
  11. Repeat the procedure from step 6 for different sets of gate voltage VGS.
  12. Plot a curve between drain voltage VGS and drain current 10 using suitable scale with the help of observation table. This curve is the required drain characteristic.

Observation table:

Transfer Characteristics:

VGS (V) ID (PA)
0.5 0
1.1 0.1
1.4 1.2
1.5 10.8
1.8 400
1.9 1800
2 19600
2.1 44700
2.2 14800
2.3 25000
2.4 27400
2.5 27600
2.6 27700
3.6 27800

Output Characteristics:

Drain current ID(mA) at constant voltage of gate voltage

Drain Voltage VDS Drain current ID(mA) at VGS = 2.2V Drain current ID(mA) at VGS = 2.3V Drain current ID(mA) at VGS = 2.4V
0.0 0.000 0.000 0.000
0.5 0.250 0.660 2.420
1.0 0.311 0.816 3.150
2.0 0.399 1.086 4.080
3.0 0.440 1.207 4.550
4.0 0.474 1.303 4.920
5.0 0.500 1.382 5.210
6.0 0.520 1.452 5.450
7.0 0.538 1.517 5.720
8.0 0.558 1.580 5.960
9.0 0.571 1.640 6.230
10.0 0.588 1.700 6.520
11.0 0.606 1.755 6.840
12.0 0.627 1.820 7.170
13.0 0.642 1.885 7.530
14.0 0.660 1.945 7.980
15.0 0.678 2.000 8.480
16.0 0.692 2.140 9.000
17.0 0.712 2.220 9.500
18.0 0.735 2.280 10.600
19.0 0.750 2.350 11.330
20.0 0.768 2.430 12.000
21.0 0.789 2.500 12.770

Experimental Waveforms:

Output Characteristics

waveform

Transfer Characteristics

waveform-1

Conclusion: Transfer and output characteristics of MOSFET are plotted on a graph with respective values.







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