Electrical Lab Experiments

To plot the transistor (BJT) characteristics of CE configuration.

Sep 24 2023

Aim

Apparatus Required:

S.No.	Name	Range	Quantity
1	R.P.S	(0-30)V	2
2	Ammeter	(0-30)mA MC, (0-250)μA MC	1, 1
3	Voltmeter	(0-30)V MC, (0-1)V MC	1, 1

Components Required:

S.No.	Name	Range	Quantity
1	Transistor	BC 107	1
2	Resistor	10KΩ, 1KΩ	1, 1
3	Bread Board	-	1
4	Wires

Theory:

A BJT is a three terminal two - junction semiconductor device in which the conduction is due to both the charge carrier. Hence it is a bipolar device. BJT is classified into two types - NPN & PNP. A NPN transistor consists of two N types in between which a layer of P is sandwiched. The transistor consists of three terminal emitter, collector and base. The emitter layer is the source of the charge carriers and it is heavily doped with a moderate cross sectional area. The collector collects the charge carries and hence moderate doping and large cross sectional area. The base region acts a path for the movement of the charge carriers. In order to reduce the recombination of holes and electrons the base region is lightly doped and is of hollow cross sectional area. Normally the transistor operates with the EB (emitter-base) junction forward biased.

Procedure

Input Characteristics

Connect the circuit as per the circuit diagram.
Set VCe, vary V _Bein regular interval of steps and note down the corresponding I _B reading. Repeat the above procedure for different values of V _CE
Plot the graph: V _BE V _S I _B for a constant V_CE.

Output Characteristics

Connect the circuit as per the circuit diagram.
Set I _B, Vary V _CE in regular interval of steps and note down the corresponding I _C reading. Repeat the above procedure for different values of I _B
Plot the graph: V _CE V _S I _C for a constant I _B